A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region. A first wiring material comprising at least an aluminum material is formed overlying the first dielectric material. The method forms a silicon material overlying the aluminum material and forms an intermix region consuming a portion of the silicon material and a portion of the aluminum material. The method includes an annealing process to cause formation of a first alloy material from the intermix region and a polycrystalline silicon material having a p+ impurity characteristic overlying the first alloy material. A first wiring structure is formed from at least a portion of the first wiring material. A resistive switching element comprising an amorphous silicon material is formed overlying the polycrystalline silicon material having the p+ impurity characteristic. A second wiring structure comprising at least a metal material is formed overlying the resistive switching element.