Invention Grant
US08088691B2 Selective etch chemistries for forming high aspect ratio features and associated structures
有权
用于形成高纵横比特征和相关结构的选择性蚀刻化学
- Patent Title: Selective etch chemistries for forming high aspect ratio features and associated structures
- Patent Title (中): 用于形成高纵横比特征和相关结构的选择性蚀刻化学
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Application No.: US12393893Application Date: 2009-02-26
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Publication No.: US08088691B2Publication Date: 2012-01-03
- Inventor: Mark Kiehlbauch , Ted Lyle Taylor
- Applicant: Mark Kiehlbauch , Ted Lyle Taylor
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SixMyHz, where “Si” is silicon, “M” is one or more halogens, “H” is hydrogen and x≧1, y≧0 and z≧0. The carbon species can be generated from a carbon compound, such as CαMβHγ, where “C” is carbon, “M” is one or more halogens, “H” is hydrogen, and α≧1, β≧0 and γ≧0. The oxygen species can be generated from an oxygen compound, such as O2, which can react with carbon to form a volatile compound.
Public/Granted literature
- US20090159560A1 SELECTIVE ETCH CHEMISTRIES FOR FORMING HIGH ASPECT RATIO FEATURES AND ASSOCIATED STRUCTURES Public/Granted day:2009-06-25
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