Invention Grant
- Patent Title: Low decomposition storage of a tantalum precursor
- Patent Title (中): 钽前体的低分解储存
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Application No.: US12340888Application Date: 2008-12-22
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Publication No.: US08088938B2Publication Date: 2012-01-03
- Inventor: Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
- Applicant: Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
- Applicant Address: US TX Dallas US CA Fremont
- Assignee: Air Liquide Electronics U.S. LP,American Air Liquide, Inc.
- Current Assignee: Air Liquide Electronics U.S. LP,American Air Liquide, Inc.
- Current Assignee Address: US TX Dallas US CA Fremont
- Agent Patricia E. McQueeney
- Main IPC: C07F9/00
- IPC: C07F9/00 ; B01J19/00

Abstract:
Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
Public/Granted literature
- US20090163732A1 Low Decomposition Storage of a Tantalum Precursor Public/Granted day:2009-06-25
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