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US08089060B2 Non-volatile memory cell and fabrication method thereof 有权
非易失性存储单元及其制造方法

Non-volatile memory cell and fabrication method thereof
Abstract:
A non-volatile memory cell and a fabrication method thereof are provided. The non-volatile memory cell includes an anode; a cathode having a surface facing the anode; a specific structure disposed on the surface; and an ion conductor disposed among the anode, the cathode and the specific structure, wherein the specific structure is one of a bulging area on the surface of the cathode and an insulating layer with an opening.
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