Invention Grant
- Patent Title: Non-volatile memory cell and fabrication method thereof
- Patent Title (中): 非易失性存储单元及其制造方法
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Application No.: US12507253Application Date: 2009-07-22
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Publication No.: US08089060B2Publication Date: 2012-01-03
- Inventor: Chun-I Hsieh , Shih-Shu Tsai , Chang-Rong Wu
- Applicant: Chun-I Hsieh , Shih-Shu Tsai , Chang-Rong Wu
- Applicant Address: TW Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Tao-Yuan Hsien
- Agency: Volpe and Koenig, P.C.
- Priority: TW98103428A 20090203
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/331

Abstract:
A non-volatile memory cell and a fabrication method thereof are provided. The non-volatile memory cell includes an anode; a cathode having a surface facing the anode; a specific structure disposed on the surface; and an ion conductor disposed among the anode, the cathode and the specific structure, wherein the specific structure is one of a bulging area on the surface of the cathode and an insulating layer with an opening.
Public/Granted literature
- US20100193762A1 NON-VOLATILE MEMORY CELL AND FABRICATION METHOD THEREOF Public/Granted day:2010-08-05
Information query
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