Invention Grant
- Patent Title: Thin film semiconductor device having crystal grain boundaries cyclically traversing a channel part and method for manufacturing same
- Patent Title (中): 具有循环穿过通道部分的晶粒边界的薄膜半导体器件及其制造方法
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Application No.: US11683272Application Date: 2007-03-07
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Publication No.: US08089071B2Publication Date: 2012-01-03
- Inventor: Akio Machida , Toshio Fujino , Tadahiro Kono
- Applicant: Akio Machida , Toshio Fujino , Tadahiro Kono
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2006-067272 20060313; JP2006-347052 20061225
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.
Public/Granted literature
- US20080054266A1 THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE Public/Granted day:2008-03-06
Information query
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