Invention Grant
- Patent Title: Thin film transistor array panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列面板及其制造方法
-
Application No.: US12788163Application Date: 2010-05-26
-
Publication No.: US08089072B2Publication Date: 2012-01-03
- Inventor: Dong-Gyu Kim
- Applicant: Dong-Gyu Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2004-0058707 20040727
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact on the semiconductor layer; forming a data line and a drain electrode on the ohmic contact; depositing a passivation layer on the data line and the drain electrode; forming a first photoresist layer on the passivation layer; etching the passivation layer and the gate insulating layer using the first photoresist layer as a mask to expose a portion of the drain electrode and a portion of the substrate; depositing a conductive film; and removing the photoresist layer; to form a pixel electrode on a portion of the drain electrode exposed by the etching of the passivation layer.
Public/Granted literature
- US20110233551A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-09-29
Information query
IPC分类: