Invention Grant
- Patent Title: Front and backside processed thin film electronic devices
- Patent Title (中): 前后处理薄膜电子器件
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Application No.: US12877269Application Date: 2010-09-08
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Publication No.: US08089073B2Publication Date: 2012-01-03
- Inventor: Paul G. Evans , Max G. Lagally , Zhenqiang Ma , Hao-Chih Yuan , Guogong Wang , Mark A. Eriksson
- Applicant: Paul G. Evans , Max G. Lagally , Zhenqiang Ma , Hao-Chih Yuan , Guogong Wang , Mark A. Eriksson
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: H01L27/04
- IPC: H01L27/04
Abstract:
This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
Public/Granted literature
- US20100327355A1 FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES Public/Granted day:2010-12-30
Information query
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