Invention Grant
- Patent Title: Engineered structure for high brightness solid-state light emitters
- Patent Title (中): 高亮度固态发光体的工程结构
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Application No.: US12508033Application Date: 2009-07-23
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Publication No.: US08089080B2Publication Date: 2012-01-03
- Inventor: Iain Calder , Carla Miner , George Chik , Thomas Macelwee
- Applicant: Iain Calder , Carla Miner , George Chik , Thomas Macelwee
- Applicant Address: CA Ottawa, Ontario
- Assignee: Group IV Semiconductor, Inc.
- Current Assignee: Group IV Semiconductor, Inc.
- Current Assignee Address: CA Ottawa, Ontario
- Agency: Teitelbaum & MacLean
- Agent Neil Teitelbaum; Doug MacLean
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Electroluminescent (EL) light emitting structures comprises one or more active layers comprising rare earth luminescent centers in a host matrix for emitting light of a particular color or wavelength and electrodes for application of an electric field and current injection for excitation of light emission. The host matrix is preferably a dielectric containing the rare earth luminescent centers, e.g. rare earth doped silicon dioxide, silicon nitride, silicon oxynitrides, alumina, dielectrics of the general formula SiaAlbOcNd, or rare earth oxides. For efficient impact excitation, corresponding drift layers adjacent each active layer have a thickness related to a respective excitation energy of an adjacent active layer. A stack of active layers emitting different colors may be combined to provide white light. For rare earth species having a host dependent emission spectrum, spectral emission of the stack may be tuned by appropriate selection of a different host matrix in successive active layers.
Public/Granted literature
- US20100032687A1 ENGINEERED STRUCTURE FOR HIGH BRIGHTNESS SOLID-STATE LIGHT EMITTERS Public/Granted day:2010-02-11
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