A semiconductor light emitting device (A1) includes a substrate (1) and two electrodes (2A, 2B) formed on the substrate (1). The electrode (2A) is formed with a die bonding pad (2Aa), to which an LED chip (3) is bonded by silver paste (6). The outer edge of the die bonding pad (2Aa) is positioned on the inner side of the outer edge of the LED chip (3) as viewed in the thickness direction of the substrate (1). The electrode (2A) is formed with an extension (21) extending from the die bonding pad (2Aa) to the outside of the LED chip (3).