Invention Grant
US08089115B2 Organic memory device with a charge storage layer and method of manufacture
有权
具有电荷存储层的有机存储器件及其制造方法
- Patent Title: Organic memory device with a charge storage layer and method of manufacture
- Patent Title (中): 具有电荷存储层的有机存储器件及其制造方法
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Application No.: US12302200Application Date: 2007-05-22
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Publication No.: US08089115B2Publication Date: 2012-01-03
- Inventor: Wei Lin Leong , Pooi See Lee , Yeng Ming Lam , Lixin Song , Ebinazar Benjamin Namdas , G. Subodh Mhaisalkar
- Applicant: Wei Lin Leong , Pooi See Lee , Yeng Ming Lam , Lixin Song , Ebinazar Benjamin Namdas , G. Subodh Mhaisalkar
- Applicant Address: SG Singapore
- Assignee: Nanyang Technological University
- Current Assignee: Nanyang Technological University
- Current Assignee Address: SG Singapore
- Agency: Dickstein Shapiro LLP
- International Application: PCT/SG2007/000141 WO 20070522
- International Announcement: WO2007/136350 WO 20071129
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.
Public/Granted literature
- US20090146202A1 ORGANIC MEMORY DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2009-06-11
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