中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US08089116B2 FLOTOX-TYPE EEPROM and method for manufacturing the same 有权
FLOTOX型EEPROM及其制造方法

  • Patent Title: FLOTOX-TYPE EEPROM and method for manufacturing the same
  • Patent Title (中): FLOTOX型EEPROM及其制造方法
  • Application No.: US12596216
    Application Date: 2008-04-16
  • Publication No.: US08089116B2
    Publication Date: 2012-01-03
  • Inventor: Yushi Sekiguchi
  • Applicant: Yushi Sekiguchi
  • Applicant Address: JP Kyoto
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto
  • Agency: Rabin & Berdo, P.C.
  • Priority: JP2007-110663 20070419
  • International Application: PCT/JP2008/057442 WO 20080416
  • International Announcement: WO2008/129999 WO 20081030
  • Main IPC: H01L29/788
  • IPC: H01L29/788 ;  H01L21/336
FLOTOX-TYPE EEPROM and method for manufacturing the same
Abstract:
A FLOTOX-TYPE EEPROM of the invention has a configuration wherein an N region 25 as an impurity region formed under a tunnel window 12 and a channel stopper region 19 formed under a LOCOS oxide film 18 are spaced apart by a predetermined distance Y. Therefore, the tunnel window 12 does not sustain damage if an excessive voltage is applied to the tunnel window 12. As a result, the FLOTOX-TYPE EEPROM is adapted to limit the voltage applied to the tunnel window 12 and to reduce stress on the tunnel window 12 and can achieve an increased number of rewrites.
Abstract(Chinese):

本发明的FLOTOX型EEPROM具有这样的结构，其中形成在隧道窗12下方的杂质区域N区25和形成在LOCOS氧化物膜18下方的通道阻挡区域19间隔开预定距离Y.因此， 如果向隧道窗口12施加过大的电压，则隧道窗口12不会受到损坏。结果，FLOTOX型EEPROM适于限制施加到隧道窗口12的电压并且减小隧道窗口12上的应力 并可以实现更多的重写。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/788 ......带有浮栅的
Patent Agency Ranking
0/0