Invention Grant
- Patent Title: Vertical trench gate transistor semiconductor device and method for fabricating the same
- Patent Title (中): 垂直沟槽栅晶体管半导体器件及其制造方法
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Application No.: US12694897Application Date: 2010-01-27
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Publication No.: US08089122B2Publication Date: 2012-01-03
- Inventor: Shuji Mizokuchi , Kazuaki Tsunoda
- Applicant: Shuji Mizokuchi , Kazuaki Tsunoda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-360997 20041214
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/62 ; H01L31/113 ; H01L31/119
Abstract:
A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.
Public/Granted literature
- US20100127322A1 VERTICAL TRENCH GATE TRANSISTOR SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-05-27
Information query
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