An LDMOS device and a method for fabricating the same that may include a first conductivity-type semiconductor substrate having an active area and a field area; a second conductivity-type deep well formed on the first conductivity-type semiconductor substrate; a second conductivity-type adjusting layer located in the second conductivity-type deep well; a first conductivity-type body formed in the second conductivity-type deep well; an insulating layer formed on the first conductivity-type semiconductor substrate in the active area and the field area; a gate area formed on the first conductivity-type semiconductor substrate in the active area; a second conductivity-type source area formed in the first conductivity-type body; a second conductivity-type drain area formed in the second conductivity-type deep well. Accordingly, such an LDMOS device has a high breakdown voltage without an increase in on-resistance.