Invention Grant
US08089126B2 Method and structures for improving substrate loss and linearity in SOI substrates
有权
改善SOI衬底的衬底损耗和线性度的方法和结构
- Patent Title: Method and structures for improving substrate loss and linearity in SOI substrates
- Patent Title (中): 改善SOI衬底的衬底损耗和线性度的方法和结构
-
Application No.: US12507150Application Date: 2009-07-22
-
Publication No.: US08089126B2Publication Date: 2012-01-03
- Inventor: Alan Bernard Botula , David S. Collins , Alvin Jose Joseph , Howard Smith Landis , James Albert Slinkman , Anthony K. Stamper
- Applicant: Alan Bernard Botula , David S. Collins , Alvin Jose Joseph , Howard Smith Landis , James Albert Slinkman , Anthony K. Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent David A. Cain
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
Methods and structures for improving substrate loss and linearity in SOI substrates. The methods include forming damaged crystal structure regions under the buried oxide layer of SOI substrates and the structures included damaged crystal structure regions under the buried oxide layer of the SOI substrate.
Public/Granted literature
- US20110018060A1 METHOD AND STRUCTURES FOR IMPROVING SUBSTRATE LOSS AND LINEARITY IN SOI SUBSTRATES Public/Granted day:2011-01-27
Information query
IPC分类:
