Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12891214Application Date: 2010-09-27
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Publication No.: US08089136B2Publication Date: 2012-01-03
- Inventor: Hiroyuki Amishiro , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- Applicant: Hiroyuki Amishiro , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2001-059948 20010305
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.
Public/Granted literature
- US20110012231A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-01-20
Information query
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