Invention Grant
US08089138B2 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device
有权
表面疏水化膜，用于形成表面疏水化膜的材料，布线层，半导体器件和用于制造半导体器件的工艺
- Patent Title: Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device
- Patent Title (中): 表面疏水化膜，用于形成表面疏水化膜的材料，布线层，半导体器件和用于制造半导体器件的工艺
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Application No.: US12545596Application Date: 2009-08-21
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Publication No.: US08089138B2Publication Date: 2012-01-03
- Inventor: Tadahiro Imada , Yoshihiro Nakata
- Applicant: Tadahiro Imada , Yoshihiro Nakata
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/31 ; H05K1/03 ; C09D5/00 ; C07F7/08
Abstract:
A surface-hydrophobicized film is provided which is in contact with an insulating film, and has a higher hydrophobicity than the insulating film at the time of the contact, and which is in contact, on an opposite side of the surface-hydrophobicized film, with wiring, and contains at least one atom selected from the group consisting of sulfur atoms, phosphorus atoms and nitrogen atoms. Semiconductor devices with wiring layers having a low leakage current, a high EM resistance and a high TDDB resistance can be manufactured by using the film.
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