Invention Grant
US08089139B2 Small outline package in which MOSFET and Schottky diode being co-packaged
有权
MOSFET和肖特基二极管共同封装的小外形封装
- Patent Title: Small outline package in which MOSFET and Schottky diode being co-packaged
- Patent Title (中): MOSFET和肖特基二极管共同封装的小外形封装
-
Application No.: US11792010Application Date: 2005-10-09
-
Publication No.: US08089139B2Publication Date: 2012-01-03
- Inventor: Zhengyu Shi , Limin Wang , Lei Shi
- Applicant: Zhengyu Shi , Limin Wang , Lei Shi
- Applicant Address: BM
- Assignee: Alpha & Omega Semiconductor, Ltd.
- Current Assignee: Alpha & Omega Semiconductor, Ltd.
- Current Assignee Address: BM
- Agent Bo-In Lin
- Priority: CN200410084702 20041130
- International Application: PCT/CN2005/001658 WO 20051009
- International Announcement: WO2006/058477 WO 20060608
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A TSOP (Thin Small Outline Package) contains a MOSFET and a Schottky diode. The MOSFET has a source terminal a gate terminal and a drain terminal. The Schottky diode has a cathode terminal, a anode terminal. The TSOP contains the MOSFET and the Schottky diode with a special configuration by placing the drain terminal of the MOSFET and the anode terminal of the Schottky diode on a same side. Specifically, the TSOP implements a leadframe that comprises a plurality of leads. The drain terminal of the MOSFET and the anode terminal extends outside of the TSOP separate on the same side of the package.
Public/Granted literature
- US20080197458A1 Small Outline Package in Which Mosfet and Schottky Diode Being Co-Packaged Public/Granted day:2008-08-21
Information query
IPC分类: