Invention Grant
- Patent Title: MTJ sensor including domain stable free layer
- Patent Title (中): MTJ传感器包括域稳定自由层
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Application No.: US12321772Application Date: 2009-01-26
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Publication No.: US08089265B2Publication Date: 2012-01-03
- Inventor: Yimin Guo , Po-Kang Wang
- Applicant: Yimin Guo , Po-Kang Wang
- Applicant Address: US CA Milpitas
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G01R15/18
- IPC: G01R15/18 ; G01R33/02

Abstract:
By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.
Public/Granted literature
- US20090184704A1 MTJ sensor including domain stable free layer Public/Granted day:2009-07-23
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