Invention Grant
- Patent Title: D/A conversion circuit and semiconductor device
- Patent Title (中): D / A转换电路和半导体器件
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Application No.: US12827391Application Date: 2010-06-30
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Publication No.: US08089385B2Publication Date: 2012-01-03
- Inventor: Yukio Tanaka
- Applicant: Yukio Tanaka
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-229860 19990816
- Main IPC: H03M1/66
- IPC: H03M1/66

Abstract:
A D/A conversion circuit in accordance with the present invention, which is provided with a switch swD, allows a writing operation of a voltage (a true gradation voltage) to be performed at a higher speed by first applying a first voltage (a voltage close to the true gradation voltage), which is supplied without passing through a resistor element, to an output line and then applying a second voltage (the true gradation voltage), which is supplied via the resistor element, to the output line. Thus, the present invention can provide a D/A conversion circuit capable of writing display data to liquid crystal cells with higher precision at higher speed, and a semiconductor device utilizing such a D/A conversion circuit.
Public/Granted literature
- US20100328128A1 D/A Conversion Circuit and Semiconductor Device Public/Granted day:2010-12-30
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