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US08089571B2 Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device 有权
有源矩阵基板，有源矩阵基板的制造方法，显示装置，液晶显示装置以及电视装置

Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device
Abstract:
An active matrix substrate (12) includes a substrate, a TFT (24) formed on the substrate, a storage capacitor element (20) formed on the substrate, an interlayer insulating film covering the storage capacitor element (20), and a pixel electrode (21) formed on the interlayer insulating film. The storage capacitor element (20) includes a storage capacitor line (27), an insulating film formed on the storage capacitor line (27), and two or more storage capacitor electrodes (25a, 25b, 25c) opposed to the storage capacitor line (27) with the insulating film interposed therebetween. The two or more storage capacitor electrodes (25a, 25b, 25c) are electrically connected via associated contact holes (26a, 26b, 26c) formed in the interlayer insulating film to the pixel electrode (21) and electrically continuous with a drain electrode of the TFT (24).
Abstract(Chinese):

有源矩阵基板（12）包括基板，形成在基板上的TFT（24），形成在基板上的辅助电容元件（20），覆盖该保持电容元件（20）的层间绝缘膜，以及像素电极 （21）形成在层间绝缘膜上。 存储电容器元件（20）包括辅助电容线（27），形成在辅助电容线（27）上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极（25a，25b，25c） 27），其间插入绝缘膜。 两个以上的保持电容电极（25a，25b，25c）通过形成在层间绝缘膜中的相关接触孔（26a，26b，26c）与像素电极（21）电连接，并与 TFT（24）。

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