Invention Grant
- Patent Title: Overcurrent protection apparatus for load circuit
- Patent Title (中): 负载电路过流保护装置
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Application No.: US12595332Application Date: 2008-04-10
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Publication No.: US08089742B2Publication Date: 2012-01-03
- Inventor: Shunzou Ohshima
- Applicant: Shunzou Ohshima
- Applicant Address: JP Tokyo
- Assignee: Yazaki Corporation
- Current Assignee: Yazaki Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-102734 20070410
- International Application: PCT/JP2008/057107 WO 20080410
- International Announcement: WO2008/126907 WO 20081023
- Main IPC: H02H5/04
- IPC: H02H5/04

Abstract:
To provide an overcurrent protection apparatus which can surely protect a load circuit from an overcurrent with a simple configuration. Supposing that the temperature increasing amount of a semiconductor element caused when the semiconductor element is turned on is ΔTch, the on-resistance value of the semiconductor element (T1) is Ron, the thermal resistance value of the semiconductor element (T1) is Rth_f, the temperature increasing amount of a connecting wiring is ΔTw when a current flows into the connecting wiring (WL), the resistance value per unit length of the connecting wiring is Rw, and the thermal resistance value per unit length of the connecting wiring is Rth_w, ΔTch is obtained based on an expression of ΔTW/ΔTch=Rth_w/Rth_f*Rw/Ron with respect to the temperature increasing amount ΔTw not exceeding a difference between the upper limit of the permissible temperature of the connecting wiring (WL) and the upper limit of an operational peripheral temperature, then a voltage Vds is obtained based on an expression of ΔTch=Rth_f*Vds2/Ron with respect to the ΔTch thus obtained, and the voltage Vds thus obtained is set as a determination voltage.
Public/Granted literature
- US20100118461A1 OVERCURRENT PROTECTION APPARATUS FOR LOAD CIRCUIT Public/Granted day:2010-05-13
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