Invention Grant
US08089795B2 Memory module with memory stack and interface with enhanced capabilities 有权
内存模块,具有内存堆栈和具有增强功能的接口

Memory module with memory stack and interface with enhanced capabilities
Abstract:
A memory module, which includes at least one memory stack, comprises a plurality of DRAM integrated circuits and an interface circuit. The interface circuit interfaces the memory stack to a host system so as to operate the memory stack as a single DRAM integrated circuit. In other embodiments, a memory module includes at least one memory stack and a buffer integrated circuit. The buffer integrated circuit, coupled to a host system, interfaces the memory stack to the host system so to operate the memory stack as at least two DRAM integrated circuits. In yet other embodiments, an interface circuit maps virtual addresses from the host system to physical addresses of the DRAM integrated circuits in a linear manner. In a further embodiment, the interface circuit maps one or more banks of virtual addresses from the host system to a single one of the DRAM integrated circuits. In yet other embodiments, the buffer circuit interfaces the memory stack to the host system for transforming one or more physical parameters between the DRAM integrated circuits and the host system. In still other embodiments, the buffer circuit interfaces the memory stack to the host system for configuring one or more of the DRAM integrated circuits in the memory stack. Neither the patentee nor the USPTO intends for details set forth in the abstract to constitute limitations to claims not explicitly reciting those details.
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