Invention Grant
- Patent Title: Method of manufacturing silica glass crucible for pulling silicon single crystals
- Patent Title (中): 制造硅单晶硅玻璃坩埚的方法
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Application No.: US12351115Application Date: 2009-01-09
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Publication No.: US08091384B2Publication Date: 2012-01-10
- Inventor: Tadahiro Sato , Masaki Morikawa
- Applicant: Tadahiro Sato , Masaki Morikawa
- Applicant Address: JP Akita-Ken
- Assignee: Japan Super Quartz Corporation
- Current Assignee: Japan Super Quartz Corporation
- Current Assignee Address: JP Akita-Ken
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-281170 20081031
- Main IPC: C03B19/00
- IPC: C03B19/00

Abstract:
The disclosed is a method of manufacturing a silica glass crucible for pulling silicon single crystals. In the method, reduced pressure is imparted from the inner surface to the outer surface of a crucible-shaped molded product and the crucible-shaped molded product is arc-fused while rotating the same to form a silica glass crucible with a transparent layer on the inner surface side and a bubble layer on the outer surface side. The inner surface of the wall portion of the silica glass crucible is fused a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the wall portion to be displaced toward the bottom portion of the inner surface of the wall portion. The inner surface of the bottom portion of the silica glass crucible is fuse a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the bottom portion to be displaced toward the periphery of the inner surface of the bottom portion. Either the step of displacement toward the bottom portion or the step of displacement toward the outer periphery is inverted first.
Public/Granted literature
- US20100107691A1 METHOD OF MANUFACTURING SILICA GLASS CRUCIBLE FOR PULLING SILICON SINGLE CRYSTALS Public/Granted day:2010-05-06
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