Invention Grant
- Patent Title: Manufacturing method in plasma processing apparatus
- Patent Title (中): 等离子体处理装置的制造方法
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Application No.: US12038841Application Date: 2008-02-28
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Publication No.: US08092637B2Publication Date: 2012-01-10
- Inventor: Yutaka Kouzuma , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
- Applicant: Yutaka Kouzuma , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306
Abstract:
A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.
Public/Granted literature
- US20090218316A1 MANUFACTURING METHOD IN PLASMA PROCESSING APPARATUS Public/Granted day:2009-09-03
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