Invention Grant
US08092658B2 Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
失效
用于保形离子刺激纳米尺度沉积工艺的分布式等离子体处理系统的方法和装置
- Patent Title: Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
- Patent Title (中): 用于保形离子刺激纳米尺度沉积工艺的分布式等离子体处理系统的方法和装置
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Application No.: US11835067Application Date: 2007-08-07
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Publication No.: US08092658B2Publication Date: 2012-01-10
- Inventor: Jozef Brcka
- Applicant: Jozef Brcka
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.
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