Invention Grant
- Patent Title: Endpoint detection for photomask etching
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Application No.: US11926482Application Date: 2007-10-29
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Publication No.: US08092695B2Publication Date: 2012-01-10
- Inventor: Michael Grimbergen
- Applicant: Michael Grimbergen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: C23F1/02
- IPC: C23F1/02
Abstract:
Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.
Public/Granted literature
- US20090014409A1 ENDPOINT DETECTION FOR PHOTOMASK ETCHING Public/Granted day:2009-01-15
Information query
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