Invention Grant
- Patent Title: Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions
- Patent Title (中): 通过包括使用特定蚀刻剂溶液的工艺形成半导体器件的方法
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Application No.: US12199928Application Date: 2008-08-28
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Publication No.: US08092698B2Publication Date: 2012-01-10
- Inventor: Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
- Applicant: Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2004-0061227 20040803
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
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