Invention Grant
US08092704B2 System, method and apparatus for fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications
有权
用于制造用于热辅助记录应用的c-孔径或E-天线等离子体近场源的系统,方法和装置
- Patent Title: System, method and apparatus for fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications
- Patent Title (中): 用于制造用于热辅助记录应用的c-孔径或E-天线等离子体近场源的系统,方法和装置
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Application No.: US12345715Application Date: 2008-12-30
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Publication No.: US08092704B2Publication Date: 2012-01-10
- Inventor: Hamid Balamane , Thomas Dudley Boone, Jr. , Jordan Asher Katine , Barry Cushing Stipe
- Applicant: Hamid Balamane , Thomas Dudley Boone, Jr. , Jordan Asher Katine , Barry Cushing Stipe
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: B44C1/22
- IPC: B44C1/22 ; B23P15/00

Abstract:
A method of fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications in hard disk drives is disclosed. A c-aperture or E-antenna is built for recording head applications. The technique employs e-beam lithography, partial reactive ion etching and metal refill to build the c-apertures. This process strategy has the advantage over other techniques in the self-alignment of the c-aperture notch to the c-aperture internal diameter, the small number of process steps required, and the precise and consistent shape of the c-aperture notch itself.
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