Invention Grant
- Patent Title: Preparation of metal oxide thin film via cyclic CVD or ALD
- Patent Title (中): 通过循环CVD或ALD制备金属氧化物薄膜
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Application No.: US12410529Application Date: 2009-03-25
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Publication No.: US08092870B2Publication Date: 2012-01-10
- Inventor: Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
- Applicant: Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Joseph D. Rossi; Geoffrey L. Chase
- Main IPC: H05H1/24
- IPC: H05H1/24 ; C23C16/00

Abstract:
A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.
Public/Granted literature
- US20100075067A1 Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD Public/Granted day:2010-03-25
Information query
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