Invention Grant
US08092978B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same
有权
用于电子束,X射线或EUV的正性抗蚀剂组合物和使用其的图案形成方法
- Patent Title: Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same
- Patent Title (中): 用于电子束,X射线或EUV的正性抗蚀剂组合物和使用其的图案形成方法
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Application No.: US12410881Application Date: 2009-03-25
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Publication No.: US08092978B2Publication Date: 2012-01-10
- Inventor: Katsuhiro Yamashita
- Applicant: Katsuhiro Yamashita
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-082235 20080326
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/029

Abstract:
Provided is a positive resist composition for an electron beam, an X-ray or EUV, including: (A) a resin capable of decomposing by the action of an acid to increase the dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the following formula (ZI) or (ZII); (C) a basic compound; and (D) an organic solvent, wherein a concentration of all solid contents in said composition is from 1.0 to 4.5 mass %, and a total amount of the compound represented by formula (ZI) or (ZII) is 12 mass % or more based on all solid contents in said composition: wherein symbols in the formulae are defined in the specification.
Public/Granted literature
- US20090246685A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME Public/Granted day:2009-10-01
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