Invention Grant
- Patent Title: Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof
- Patent Title (中): 制备III族氮化物半导体光电器件的方法及其结构
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Application No.: US12396750Application Date: 2009-03-03
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Publication No.: US08093082B2Publication Date: 2012-01-10
- Inventor: Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Chih Peng Hsu , Shih Hsiung Chan
- Applicant: Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Chih Peng Hsu , Shih Hsiung Chan
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: TW97107609A 20080305
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.
Public/Granted literature
- US20090224283A1 METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF Public/Granted day:2009-09-10
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