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US08093115B2 Tuning of SOI substrate doping 有权
调整SOI衬底掺杂

Tuning of SOI substrate doping
Abstract:
A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.
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