Invention Grant
- Patent Title: Tuning of SOI substrate doping
- Patent Title (中): 调整SOI衬底掺杂
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Application No.: US12886727Application Date: 2010-09-21
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Publication No.: US08093115B2Publication Date: 2012-01-10
- Inventor: Wolfgang Schwartz , Alfred Haeusler , Vladimir Frank Drobny
- Applicant: Wolfgang Schwartz , Alfred Haeusler , Vladimir Frank Drobny
- Applicant Address: DE Freising
- Assignee: Texas Instruments Deutschland GmbH
- Current Assignee: Texas Instruments Deutschland GmbH
- Current Assignee Address: DE Freising
- Agent Warren L. Frantz; Wade J. Brady III; Frederick J. Telecky, Jr
- Priority: DE102009042514 20090922
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/425

Abstract:
A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.
Public/Granted literature
- US20110070719A1 TUNING OF SOI SUBSTRATE DOPING Public/Granted day:2011-03-24
Information query
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