Invention Grant
- Patent Title: Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
- Patent Title (中): 包括具有前侧和后侧的硅单晶衬底和沉积在正面上的SiGe层的晶片的制造方法
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Application No.: US12724584Application Date: 2010-03-16
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Publication No.: US08093143B2Publication Date: 2012-01-10
- Inventor: Peter Storck , Thomas Buschhardt
- Applicant: Peter Storck , Thomas Buschhardt
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: EP09006476 20090513
- Main IPC: H01L21/36
- IPC: H01L21/36

Abstract:
A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order: simultaneously polishing the front and the back side of the silicon single crystal substrate; depositing a stress compensating layer on the back side of the silicon single crystal substrate; polishing the front side of the silicon single crystal substrate; cleaning the silicon single crystal substrate having the stress compensating layer deposited on the back side; and depositing a fully or partially relaxed layer of SiGe on the front side of the silicon single crystal substrate.
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