Invention Grant
US08093143B2 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side 有权
包括具有前侧和后侧的硅单晶衬底和沉积在正面上的SiGe层的晶片的制造方法

  • Patent Title: Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
  • Patent Title (中): 包括具有前侧和后侧的硅单晶衬底和沉积在正面上的SiGe层的晶片的制造方法
  • Application No.: US12724584
    Application Date: 2010-03-16
  • Publication No.: US08093143B2
    Publication Date: 2012-01-10
  • Inventor: Peter StorckThomas Buschhardt
  • Applicant: Peter StorckThomas Buschhardt
  • Applicant Address: DE Munich
  • Assignee: Siltronic AG
  • Current Assignee: Siltronic AG
  • Current Assignee Address: DE Munich
  • Agency: Brooks Kushman P.C.
  • Priority: EP09006476 20090513
  • Main IPC: H01L21/36
  • IPC: H01L21/36
Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
Abstract:
A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order: simultaneously polishing the front and the back side of the silicon single crystal substrate; depositing a stress compensating layer on the back side of the silicon single crystal substrate; polishing the front side of the silicon single crystal substrate; cleaning the silicon single crystal substrate having the stress compensating layer deposited on the back side; and depositing a fully or partially relaxed layer of SiGe on the front side of the silicon single crystal substrate.
Information query
Patent Agency Ranking
0/0