Invention Grant
- Patent Title: Method of etching oxide layer and nitride layer
- Patent Title (中): 蚀刻氧化层和氮化物层的方法
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Application No.: US12641323Application Date: 2009-12-18
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Publication No.: US08093153B2Publication Date: 2012-01-10
- Inventor: Ping-Chia Shih
- Applicant: Ping-Chia Shih
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corporation
- Current Assignee: United Microelectronics Corporation
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/314

Abstract:
An exemplary method of patterning oxide layer and removing residual nitride includes steps of forming a first oxide layer, a nitride layer, a second oxide layer and a complex hard mask on a substrate in turn. The first oxide layer covers an insulating structure. The second oxide layer, the complex hard mask and the nitride layer are etched by utilizing a patterned photoresist as an etching mask, so as to expose the first oxide layer. In addition, the part of the nitride layer covering the insulating structure can be further removed. Accordingly, the present invention can effectively control layout patterns of material layers and doped regions and thereby can improve the performance of a narrow width device.
Public/Granted literature
- US20110151672A1 Method of Etching Oxide Layer and Nitride Layer Public/Granted day:2011-06-23
Information query
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