Invention Grant
US08093488B2 Hybrid photovoltaic cell using amorphous silicon germanium absorbers with wide bandgap dopant layers and an up-converter
有权
使用具有宽带隙掺杂剂层和上变频器的非晶硅锗吸收体的混合光伏电池
- Patent Title: Hybrid photovoltaic cell using amorphous silicon germanium absorbers with wide bandgap dopant layers and an up-converter
- Patent Title (中): 使用具有宽带隙掺杂剂层和上变频器的非晶硅锗吸收体的混合光伏电池
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Application No.: US12199855Application Date: 2008-08-28
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Publication No.: US08093488B2Publication Date: 2012-01-10
- Inventor: Hans Jürgen Richter , Samuel Dacke Harkness, IV
- Applicant: Hans Jürgen Richter , Samuel Dacke Harkness, IV
- Applicant Address: US CA Scott Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scott Valley
- Agency: Pietragallo Gordon Alfano Bosick & Raspanti, LLP
- Agent Robert P. Lenart, Esq.
- Main IPC: H01L31/042
- IPC: H01L31/042
Abstract:
A photovoltaic apparatus includes an absorber including a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an amorphous SiGe intrinsic layer between the p-layer and the n-layer; a first electrode adjacent to a first side of the absorber; a second electrode adjacent to a second side of the absorber; and an up-converter layer positioned adjacent to the second electrode on an opposite side of the second electrode from the absorber, wherein the up-converter layer includes a plurality of quantum dots of a first material in a matrix of a second material.
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