Invention Grant
- Patent Title: Memristive device with a bi-metallic electrode
- Patent Title (中): 带双金属电极的忆阻器
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Application No.: US12426647Application Date: 2009-04-20
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Publication No.: US08093575B2Publication Date: 2012-01-10
- Inventor: Qiangfei Xia , Xuema Li , Jianhua Yang
- Applicant: Qiangfei Xia , Xuema Li , Jianhua Yang
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and the second electrode is in electrical contact with the memristive matrix and an underlying layer. At least one of the first and second electrodes is a bimetallic electrode which includes a conducting layer and a metallic layer.
Public/Granted literature
- US20100264397A1 MEMRISTIVE DEVICE WITH A BI-METALLIC ELECTRODE Public/Granted day:2010-10-21
Information query
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