Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12451622Application Date: 2008-05-21
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Publication No.: US08093611B2Publication Date: 2012-01-10
- Inventor: Hyo Kun Son
- Applicant: Hyo Kun Son
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0049058 20070521
- International Application: PCT/KR2008/002836 WO 20080521
- International Announcement: WO2008/143460 WO 20081127
- Main IPC: H01L33/02
- IPC: H01L33/02
Abstract:
A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
Public/Granted literature
- US20100133567A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-06-03
Information query
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