Invention Grant
- Patent Title: Method for manufacturing non-volatile memory and structure thereof
- Patent Title (中): 制造非易失性存储器的方法及其结构
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Application No.: US12501029Application Date: 2009-07-10
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Publication No.: US08093648B2Publication Date: 2012-01-10
- Inventor: An-Thung Cho , Chia-Tien Peng , Chih-Wei Chao , Wan-Yi Liu , Chia-Kai Chen , Chun-Hsiun Chen , Wei-Ming Huang
- Applicant: An-Thung Cho , Chia-Tien Peng , Chih-Wei Chao , Wan-Yi Liu , Chia-Kai Chen , Chun-Hsiun Chen , Wei-Ming Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Au Optronics Corp.
- Current Assignee: Au Optronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agency: Rabin & Berdo, PC
- Priority: TW97127223A 20080717
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a semiconductor layer is formed on the substrate. Then, a Si-rich dielectric layer is formed on the semiconductor layer. After that, a plurality of silicon nanocrystals is formed in the Si-rich dielectric layer by a laser annealing process to form a charge-storing dielectric layer. Last, a gate electrode is formed on the charge-storing dielectric layer.
Public/Granted literature
- US20100013001A1 METHOD FOR MANUFACTURING NON-VOLATILE MEMORY AND STRUCTURE THEREOF Public/Granted day:2010-01-21
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