Invention Grant
US08093655B2 Integrated circuit including a trench transistor having two control electrodes
有权
集成电路包括具有两个控制电极的沟槽晶体管
- Patent Title: Integrated circuit including a trench transistor having two control electrodes
- Patent Title (中): 集成电路包括具有两个控制电极的沟槽晶体管
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Application No.: US11760275Application Date: 2007-06-08
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Publication No.: US08093655B2Publication Date: 2012-01-10
- Inventor: Franz Hirler , Maximilian Roesch , Ralf Siemieniec
- Applicant: Franz Hirler , Maximilian Roesch , Ralf Siemieniec
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102006026943 20060609
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/00
Abstract:
An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge structure for electrically contact-connecting second control electrode.
Public/Granted literature
- US20070296029A1 INTEGRATRED CIRCUIT INCLUDING A TRENCH TRANSISTOR HAVING TWO CONTROL ELECTRODES Public/Granted day:2007-12-27
Information query
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