Invention Grant
US08093675B2 Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module 有权
光电转换元件,光电转换元件组件和光电转换模块

  • Patent Title: Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module
  • Patent Title (中): 光电转换元件,光电转换元件组件和光电转换模块
  • Application No.: US12674967
    Application Date: 2008-07-25
  • Publication No.: US08093675B2
    Publication Date: 2012-01-10
  • Inventor: Akiko TsunemiSatoshi Okamoto
  • Applicant: Akiko TsunemiSatoshi Okamoto
  • Applicant Address: JP Osaka
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka
  • Agency: Nixon & Vanderhye, P.C.
  • Priority: JP2007-226328 20070831
  • International Application: PCT/JP2008/063421 WO 20080725
  • International Announcement: WO2009/028287 WO 20090305
  • Main IPC: H01L31/00
  • IPC: H01L31/00
Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module
Abstract:
To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member.A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer and electrically connected to the first semiconductor layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer brought into contact with the first semiconductor layer and arranged at least in part on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided so as to be electrically connected to the second semiconductor layer on its light-receiving side; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the photoelectric conversion element.
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