Semiconductor device

Invention Grant

US08093696B2 Semiconductor device 有权

Title translation: 半导体器件

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Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US12122215

Application Date: 2008-05-16
Publication No.: US08093696B2

Publication Date: 2012-01-10
Inventor: Kimyung Yoon , Stephan Dobritz , Stefan Ruckmich
Applicant: Kimyung Yoon , Stephan Dobritz , Stefan Ruckmich
Applicant Address: DE Munich
Assignee: Qimonda AG
Current Assignee: Qimonda AG
Current Assignee Address: DE Munich
Main IPC: H01L23/02
IPC: H01L23/02

Abstract:

According to one embodiment of the present invention, a semiconductor device is provided, that includes a semiconductor carrier; a cavity formed within the semiconductor carrier, the cavity extending from the top surface of the semiconductor carrier into the semiconductor carrier; and at least one semiconductor chip provided within the cavity.

Abstract(Chinese):

根据本发明的一个实施例，提供一种包括半导体载体的半导体器件; 形成在所述半导体载体内的空腔，所述空腔从所述半导体载体的顶表面延伸到所述半导体载体中; 以及设置在腔内的至少一个半导体芯片。

Public/Granted literature

US20090283899A1 Semiconductor Device Public/Granted day:2009-11-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/02	.容器；封接（H01L23/12，H01L23/34，H01L23/48，H01L23/552优先）