Invention Grant
US08093698B2 Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
有权
用于防止金属 - 绝缘体 - 金属器件中绝缘氧化物的还原的吸气/停止层
- Patent Title: Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
- Patent Title (中): 用于防止金属 - 绝缘体 - 金属器件中绝缘氧化物的还原的吸气/停止层
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Application No.: US11633844Application Date: 2006-12-05
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Publication No.: US08093698B2Publication Date: 2012-01-10
- Inventor: Manuj Rathor , Matthew Buynoski , Joffre F. Bernard , Steven Avanzino , Suzette K. Pangrle
- Applicant: Manuj Rathor , Matthew Buynoski , Joffre F. Bernard , Steven Avanzino , Suzette K. Pangrle
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01G4/224
- IPC: H01G4/224

Abstract:
An electronic device includes a first electrode, a second electrode and an insulating layer between the first and second electrodes, which insulating layer may be susceptible to reduction by H2. A gettering layer is provided on and in contact with the first electrode, the gettering layer acting as a protective layer for substantially avoiding reduction of the insulating layer by capturing and immobilizing H2. A glue layer may be provided between the gettering layer and first electrode. An additional gettering layer may be provided on and in contact with the second electrode, and a glue layer may be provided between the second electrode and additional gettering layer.
Public/Granted literature
- US20080130195A1 Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device Public/Granted day:2008-06-05
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