Invention Grant
US08093698B2 Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device 有权
用于防止金属 - 绝缘体 - 金属器件中绝缘氧化物的还原的吸气/停止层

Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
Abstract:
An electronic device includes a first electrode, a second electrode and an insulating layer between the first and second electrodes, which insulating layer may be susceptible to reduction by H2. A gettering layer is provided on and in contact with the first electrode, the gettering layer acting as a protective layer for substantially avoiding reduction of the insulating layer by capturing and immobilizing H2. A glue layer may be provided between the gettering layer and first electrode. An additional gettering layer may be provided on and in contact with the second electrode, and a glue layer may be provided between the second electrode and additional gettering layer.
Information query
Patent Agency Ranking
0/0