Invention Grant
- Patent Title: Contact fuse which does not touch a metal layer
- Patent Title (中): 接触不接触金属层的保险丝
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Application No.: US11192825Application Date: 2005-07-29
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Publication No.: US08093716B2Publication Date: 2012-01-10
- Inventor: Robert L. Pitts , Bryan Sheffield , Roger Griesmer , Joe McPherson
- Applicant: Robert L. Pitts , Bryan Sheffield , Roger Griesmer , Joe McPherson
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
The present invention provides a semiconductor device fuse, comprising a metal layer and a first semiconductor layer that electrically couples the metal layer to a fuse layer, wherein the fuse layer is spaced apart from the metal layer. The semiconductor device fuse further comprises a second semiconductor layer that forms a blow junction interface with the fuse layer. The blow junction interface is configured to form an open circuit when a predefined power is transmitted through the second semiconductor layer to the fuse layer.
Public/Granted literature
- US20070023859A1 Contact fuse which does not touch a metal layer Public/Granted day:2007-02-01
Information query
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