Invention Grant
US08093932B2 Power-on reset signal generation circuit of semiconductor memory apparatus
有权
半导体存储装置的上电复位信号发生电路
- Patent Title: Power-on reset signal generation circuit of semiconductor memory apparatus
- Patent Title (中): 半导体存储装置的上电复位信号发生电路
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Application No.: US12650954Application Date: 2009-12-31
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Publication No.: US08093932B2Publication Date: 2012-01-10
- Inventor: Jae Kwan Kwon , Sang Hwa Chung
- Applicant: Jae Kwan Kwon , Sang Hwa Chung
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0117000 20091130
- Main IPC: H03L7/00
- IPC: H03L7/00
Abstract:
A power-on reset signal generation circuit of a semiconductor memory apparatus includes an external voltage level detector configured to detect an external voltage and generate an external voltage detection signal; a band gap voltage generation unit configured to generate a band gap voltage in response to the external voltage detection signal; a level detection voltage dividing unit configured to divide the external voltage depending upon a level of the band gap voltage and generate a division voltage; and a power-on reset signal generation unit configured to compare the level of the band gap voltage with a level of the division voltage and generate a power-on reset signal.
Public/Granted literature
- US20110128053A1 POWER-ON RESET SIGNAL GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2011-06-02
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