Invention Grant
- Patent Title: Method and system for precise current matching in deep sub-micron technology
- Patent Title (中): 深亚微米技术精密电流匹配方法与系统
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Application No.: US11618152Application Date: 2006-12-29
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Publication No.: US08093952B2Publication Date: 2012-01-10
- Inventor: Arya Behzad , Stephen Chi-Wang Au , Dandan Li
- Applicant: Arya Behzad , Stephen Chi-Wang Au , Dandan Li
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H00G3/10

Abstract:
Aspects of a method and system for precise current matching in deep sub-micron technology may include adjusting a current mirror to compensate for MOSFET gate leakage currents by using feedback circuits. The feedback circuits may be implemented from active components to create active feedback circuits. If the reference current to be mirrored is noisy, a smoothing effect may be achieved by introducing a low-pass filter coupled to the current mirror design. The active feedback may comprise amplifiers, which may comprise one or more amplifier stages. The amplifier may amplify either a bias voltage error or a bias current error. Furthermore, a transimpedance amplifier may be utilized in the feedback loop. The output bias current of the current mirror may be stabilized dynamically during adjusting. Multiple current sources may be utilized in the current mirrors.
Public/Granted literature
- US20080157875A1 Method and System for Precise Current Matching in Deep Sub-Micron Technology Public/Granted day:2008-07-03
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