Invention Grant
US08094033B2 Apparatus to monitor process-based parameters of an integrated circuit (IC) substrate
有权
用于监视集成电路（IC）衬底的基于工艺的参数的装置
- Patent Title: Apparatus to monitor process-based parameters of an integrated circuit (IC) substrate
- Patent Title (中): 用于监视集成电路（IC）衬底的基于工艺的参数的装置
-
Application No.: US12254364Application Date: 2008-10-20
-
Publication No.: US08094033B2Publication Date: 2012-01-10
- Inventor: Leonard Dauphinee , Lawrence M. Burns
- Applicant: Leonard Dauphinee , Lawrence M. Burns
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne Kessler Goldstein & Fox, PLLC
- Main IPC: G08B21/00
- IPC: G08B21/00
Abstract:
A process monitor measures the absolute value of unit sample resistors and transistors on a common Integrated Circuit (IC) substrate. This information can be used to adjust the gain of an amplifier assembly to a desired value, or to determine the true, corrected gain of such the amplifier assembly. Also, process information about process variations corresponding to the common IC substrate can be collected from the process monitor. Gain correction factors are derived and applied to the amplifier assembly to compensate for the process variations using the gain value and the process information.
Public/Granted literature
- US20090040059A1 Apparatus to Monitor Process-Based Parameters of an Integrated Circuit (IC) Substrate Public/Granted day:2009-02-12
Information query
