Invention Grant
US08095894B2 Changing a design rule for forming LSI pattern based on evaluating effectiveness of optical proximity corrected patterns
有权
基于评估光学邻近校正图案的有效性,改变形成LSI图案的设计规则
- Patent Title: Changing a design rule for forming LSI pattern based on evaluating effectiveness of optical proximity corrected patterns
- Patent Title (中): 基于评估光学邻近校正图案的有效性,改变形成LSI图案的设计规则
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Application No.: US12213913Application Date: 2008-06-26
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Publication No.: US08095894B2Publication Date: 2012-01-10
- Inventor: Akio Misaka , Shinji Odanaka
- Applicant: Akio Misaka , Shinji Odanaka
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP11-057259 19990304
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical proximity corrections are performed on at least two of the circuit patterns that have been initially placed to be adjacent to or cross each other, thereby forming optical proximity corrected patterns out of the adjacent or crossing circuit patterns. Then, it is determined whether or not optical proximity corrections can be performed effectively using the corrected patterns. If the effectiveness of the corrections is negated, a design rule defining the circuit patterns is changed to make the corrections effective. Thereafter, the initially placed circuit patterns are placed again in accordance with the design rule changed.
Public/Granted literature
- US20090019419A1 Method for forming LSI pattern Public/Granted day:2009-01-15
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