Invention Grant
- Patent Title: Sensor device with reduced parasitic-induced error
- Patent Title (中): 具有减少的寄生诱导误差的传感器装置
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Application No.: US12421513Application Date: 2009-04-09
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Publication No.: US08096179B2Publication Date: 2012-01-17
- Inventor: David E. Bien , Dejan Mijuskovic
- Applicant: David E. Bien , Dejan Mijuskovic
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Meschkow & Gresham, P.L.C.
- Main IPC: G01C19/00
- IPC: G01C19/00

Abstract:
A device (110) includes a sensing element (26) having drive nodes (34, 36) and sense nodes (42, 44). Parasitic capacitance (22) is present between drive node (34) and sense node (42). Likewise, parasitic capacitance (24) is present between drive node (36) and sense node (44). When a drive signal (56) is applied between drive nodes (34, 36), a parasitic current (70) between drive and sense nodes (34, 42) and a parasitic current (72) between drive and sense nodes (36,44) is created due to the parasitic capacitances (22, 24). A capacitive network (112) is coupled between the drive node (36) and the sense node (42) to create a correction current (134) through capacitive network (112) that cancels parasitic current (70). Likewise, a capacitive network (114) is coupled between the drive node (34) and the sense node (44) to create a correction current (138) through capacitive network (112) that cancels parasitic current (72).
Public/Granted literature
- US20100259318A1 SENSOR DEVICE WITH REDUCED PARASITIC-INDUCED ERROR Public/Granted day:2010-10-14
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