Invention Grant
- Patent Title: Manufacturing apparatus for semiconductor device and manufacturing method of semiconductor device
- Patent Title (中): 半导体装置的制造装置及半导体装置的制造方法
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Application No.: US11944830Application Date: 2007-11-26
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Publication No.: US08096805B2Publication Date: 2012-01-17
- Inventor: Tomoyasu Kudo
- Applicant: Tomoyasu Kudo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2006-318385 20061127
- Main IPC: F27B9/02
- IPC: F27B9/02
Abstract:
A manufacturing apparatus for a semiconductor device that includes a bake chamber for a wafer with a coating film formed thereon to be baked at a predetermined temperature, a cooling chamber connected to the bake chamber, a first carrying unit for the baked wafer to be carried in the cooling chamber, a first temperature control unit for the wafer carried by the first carrying unit to be cooled down, and an unloading gate for unloading the wafer cooled down from the cooling chamber.
Public/Granted literature
- US20080124947A1 MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2008-05-29
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