Invention Grant
US08097081B2 High pressure apparatus and method for nitride crystal growth 有权
用于氮化物晶体生长的高压装置和方法

  • Patent Title: High pressure apparatus and method for nitride crystal growth
  • Patent Title (中): 用于氮化物晶体生长的高压装置和方法
  • Application No.: US12133364
    Application Date: 2008-06-05
  • Publication No.: US08097081B2
    Publication Date: 2012-01-17
  • Inventor: Mark P. D'Evelyn
  • Applicant: Mark P. D'Evelyn
  • Applicant Address: US CA Fremont
  • Assignee: Soraa, Inc.
  • Current Assignee: Soraa, Inc.
  • Current Assignee Address: US CA Fremont
  • Main IPC: C30B1/12
  • IPC: C30B1/12
High pressure apparatus and method for nitride crystal growth
Abstract:
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
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